A model is developed that describes the formation of AB-compound layer at the interfaces between A- and B-layers under irradiation. The AB-layer grows owing to chemical reaction on interfaces which is provided by diffusion of A- and B-atoms through AB layer. It is shown that the growth of AB-layer can occur in two stages: the first stage is controlled by interfacial reaction (linear growth) and the second stage by diffusion (parabolic growth). Time, when the first stage is changed to the second (critical time),and corresponding critical thickness of AB compound are estimated.